IGBT OST80N65HM TO-247 N-Channel, VCES 650V, TC80A

The OST80N65HM is a high voltage, high current N-Channel Power MOSFET in a TO-247 package. This device is designed for use in a wide variety of applications, including switching power supplies, motor controls, and high-power inverters.

**Specification**

* **Drain-Source Voltage (VDSS)**: 650V

* **Drain Current (ID)**: 80A

* **Gate Threshold Voltage (VGS(th))**: 2.5V - 4.0V

* **On-Resistance (RDS(on))**: 0.15Ω

* **Switching Time (tr, tf)**: 60ns, 120ns

* **Package**: TO-247

**Features**

* **High Voltage Rating**: The OST80N65HM has a drain-source voltage rating of 650V, making it suitable for use in high-voltage applications.

* **High Current Capacity**: The OST80N65HM has a drain current rating of 80A, making it suitable for use in high-current applications.

* **Low On-Resistance**: The OST80N65HM has a low on-resistance of 0.15Ω, resulting in lower conduction losses and higher efficiency.

* **Fast Switching Time**: The OST80N65HM has a fast switching time of 60ns (tr) and 120ns (tf), making it suitable for use in high-frequency switching applications.

**Benefit**

* **Reduced Power Dissipation**: The low on-resistance of the OST80N65HM results in reduced power dissipation, which can lead to improved efficiency and reliability.

* **Reduced Switching Losses**: The fast switching time of the OST80N65HM reduces switching losses, which can lead to improved efficiency and reduced EMI.

* **Increased Power Density**: The small size and low on-resistance of the OST80N65HM allow for increased power density in designs.

**Application**

The OST80N65HM is suitable for use in a wide variety of applications, including:

* Switching power supplies

* Motor controls

* High-power inverters

* Power factor correction circuits

* Uninterruptible power supplies

* Solar inverters

* Welding machines

* Induction heating