Mosfet IRFP4668 TO-247AC N-Channel, 200V, 130A, 520W, Rds 0.0097OHM

-Type Designator: IRFP4668

-Type of Transistor: MOSFET

-Type of Control Channel: N -Channel

-Maximum Power Dissipation (Pd): 520 W

-Maximum Drain-Source Voltage |Vds|: 200 V

-Maximum Gate-Source Voltage |Vgs|: 30 V

-Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

-Maximum Drain Current |Id|: 130 A

-Maximum Junction Temperature (Tj): 175 °C

-Total Gate Charge (Qg): 161 nC

-Rise Time (tr): 105 nS

-Drain-Source Capacitance (Cd): 810 pF

-Maximum Drain-Source On-State Resistance (Rds): 0.0097 Ohm

-Package: TO247AC